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| AEGIS SEMICONDUTORES LTDA. A1N:16.XXJ VOLTAGE RATINGS Part Number A1N:16.02J A1N:16.04J A1N:16.06J A1N:16.08J A1N:16.10J A1N:16.12J A1N:16.14J A1N:16.16J VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 125 C 200 400 600 800 1000 1200 1400 1600 O VRSM , VR (V) Max. nonrep. peak reverse voltage O This datasheet applies to: Metric thread: A1N:16.XXJ Inch thread: A2N:16.XXJ TJ = -40 to 0 C 200 400 600 800 1000 1200 1330 1520 TJ = 25 to 125 C 300 500 700 900 1100 1300 1500 1700 O MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 16 85 35 0.28 IFSM Max. Peak non-rep. surge current 0.31 A 0.33 0.36 0.34 0.37 I2t Max. I2t capability 0.48 0.52 I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 5.74 kA2s1/2 A/ms W W mA tp < 5 ms V N.m(Lbf.in) Non lubricated threads kA2s t = 10ms t = 8.3 ms Initial T J = 125OC, no voltage applied after surge. 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial T J = 125OC, rated VRRM applied after surge. Initial T J = 125OC, no voltage applied after surge. UNITS O O NOTES O 180 half sine wave C C C A O IF(RMS) Nom. RMS current A 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 125 C, rated VRRM applied after surge. O Initial T J = 125 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 125OC, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - 150 8 2 150 2 2.8(25) AEGIS SEMICONDUTORES LTDA. A1N:16.XXJ PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------- TYP. ----------0.7 125 140 --5 --80 --------------- MAX. UNITS 1.84 1 18 200 100 1.5 200 --200 10 300 150 ----0.2 1.15 1.3 1.35 0.35 mA mA V V V mW mA mA ms ms TEST CONDITIONS Initial T J = 25OC, 50-60Hz half sine, Ipeak = 50A. TJ = 125OC O Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125OC, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25OC, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125OC, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125OC. Exp. to 100% or lin. Higher dv/dt values To 80% V DRM, gate open. avaliable. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 C, Rated VRRM and VDRM, gate open. TC = -40 OC TC = 25OC TC = -40OC +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. V/ms TC = 25OC TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, single side cooled. O C/W 180O sine wave, single side cooled. O C/W 120O rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O --12(0.48) TO-208AA (TO-48) g(oz.) JEDEC 125.0 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 125.0 Maximum Allowable Case Temperature (C) 124.5 124.5 124.0 124.0 123.5 123.5 123.0 30 60 90 120 30 122.5 123.0 60 90 120 180 122.0 0 5 10 15 20 25 *Rectnagular waveform 180 DC 0 *Sinusoidal waveform 5 10 15 20 30 35 40 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A1N:16.XXJ Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 400 350 300 250 200 150 100 50 0 *Sinusoidal waveform 60 30 Maximum Average Forward Power Loss 300 30 250 200 60 150 90 90 120 180 100 120 180 50 DC 0 0 5 10 15 20 25 30 35 40 *Rectangular waveform 0 5 10 15 20 25 30 35 40 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Forward Voltage Drop Characteristics 1.5 100 Trabsient Thermal Impedance ZthJC Trabsient Thermal Impedance ZthJC (C/W) 1.5 2.0 2.5 3.0 Instantaneous Forward Current (A) 1.0 10 0.5 TJ = 25C TJ = 125C 1 0.5 1.0 0.0 10-3 10-2 10-1 100 101 102 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics AEGIS SEMICONDUTORES LTDA. A1N:16.XXJ Fig. 7 - Gate Trigger Characteristics TO-208AA (TO-48) TO 48 SW14 M6 x 1 1/4" UNF 2A |
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